Recent Publications

1. “Development of low-k precursors for next generation IC manufacturing,” Doniat, Francois; Anderson, Curtis;Dussarrat, Christian, McAndrew, James, Opila, Robert, Wright, Beverly, Yang Dan; Microelectronics Engineering, 92, 34 -37 (2012). DOI: 10.1016/j.mee.2011.05.040

2. “Corrosion of RoHS-Compliant Surface Finishes in Corrosive Mixed Flowing Gas Environments,” Hannigan, K.; Reid, M.; Collins, M. N., Dalton, E., Xu, C., Wright, B., Demirkan, K., Opila, RL, Reents, WD, Franey, JP, Fleming DA, Punch, J: Journal of Electronics Materials, 41, 611-623 (2012). DOI: 10.1007/s11664-011-1799-2

3. “Chemical and Electrical Passivation of Si(111) Surfaces,” Tian, Fangyuan; Yang, Dan; Opila, Robert L.;Teplyakov, Andrew; Applied Surface Science, 258, 3019-3026 (2012). DOI: 10.1016/j.apsusc.2011.11.030

4.  “Optical absorption dependence on composition and thickness of Inx Ga1-x N (0.05<x<0.22) grown on GaN/sapphire,” Jampana, B. R., Weiland, C. R., Opila, R. L., Ferguson, I. T. Honsberg, C. B., Thin Solid Films, Volume 520, Issue 22, 1 September 2012, Pages 6807-6812 .

5. “Binding of styrene on silicon (111)-7 Å~ 7 surfaces as a model molecular electronics system,” Weiland, C. R.,Yang., L., Doren, D. J., Menning, C. A., Skliar, D., Willis, B. G., Chen, J. G., Opila, R. L., Journal of Vacuum Science and Technology A:, Vacuum, Surfaces and Films, Volume 30, Issue 3, May 2012, Article number 031401.

6.  “Surface characterization of quinhydrone-methanol and iodine-methanol passivated silicon substrates using xray photoelectron spectroscopy,” Chhabra, Bhumika; Weiland, Conan; Opila, Robert L.; Honsberg, Christiana B., Physica Status Solidi A: Applications and Materials Science (2011), 208(1), 86-90.

7. “Preparation of clean Bi2Te3 and Sb2Te3 thin films to determine alignment at valence band maxima, “Fang, Fang; Opila, Robert L.; Venkatasubramanian, Rama; Colpitts, Thomas, Journal of Vacuum Science & Technology, A: Vacuum, Surfaces, and Films (2011),29(3), 031403/1-031403/5.

8.  “Use of Sb spray for improved performance of InAs/GaAs quantum dots for novel photovoltaic structures,”Bremner, Stephen P.; Nataraj, Latha; Cloutier, Sylvain G.; Weiland, Conan; Pancholi, Anup; Opila, Robert Solar Energy Materials & Solar Cells (2011), 95(7), 1665-1670.

9.  “Wet Etching and Surface Analysis of Chemically Treated InGaN Films,” Karar, N.; Opila, R.; Beebe, T. Journal of the Electrochemical Society (2011), 158(6), D342-D350.

10.  “Wet Etching and Surface Analysis of Chemically Treated InGaN Films,” Karar, N.; Opila, R.; Beebe, T. Journal of the Electrochemical Society (2011), 158(6), D342-D350.

11. “Scanning Tunneling Microscopy and X-ray Photoelectron Spectroscopy Studies of Graphene Films Prepared by Sonication-Assisted Dispersion,” Polyakova, Elena Y.; Rim, Kwang-Taeg; Eom, Dae-Jin; Douglass, Keith; Opila, Robert L.; Heinz, Tony F.; Teplyakov, Andrew V.; Flynn, George W., ACS Nano, ACS ASAP.

12. Corrosion of Cu under highly corrosive environments Demirkan, K.; Derkits, G. E., Jr.; Fleming, D. A.; Franey, J. P.; Hannigan, K.; Opila, R. L.; Punch, J.; Reents, W. D., Jr.; Reid, M.; Wright, B.; et al Journal of the Electrochemical Society (2010), 157(1), C30-C35.

13. “Conduction mechanism of sputtered BaTiO3 film on Ni substrate,” Bao, Lijie; Ryley, James; Li, Zhigang; Wilker, Charles; Zhang, Lei; Reardon, Damien; Opila, Robert, Journal of Applied Physics (2009), 106(11), 114114/1-114114/4

14.  “Design and realization of wide-band-gap (∼ 2.67 eV) InGaN p-n junction solar cell,” Jampana, Balakrishnam R.; Melton, Andrew G.; Jamil, Muhammad; Faleev, Nikolai N.; Opila, Robert L.; Ferguson, Ian T.; Honsberg, Christiana B., IEEE Electron Device Letters (2010), 31(1), 32-34

15. “High effective minority carrier lifetime on silicon substrates using quinhydrone-methanol passivation,” Chhabra, Bhumika; Bowden, Stuart; Opila, Robert L.; Honsberg, Christiana B. Applied Physics Letters (2010), 96(6), 063502/1-063502/3.

16. “Promising Thermoelectric Properties of Commercial PEDOT-PSS Materials and Their Be2Te3 Powder Composites, Zhang, B.; Sun, J.; Katz, H. E.; Fang, F.; Opila, R. L. ACS Applied Materials & Interfaces (2010), 2(11), 3170-3178.

17. “Surface cleaning procedures for thin films of indium gallium nitride grown on sapphire,” Douglass, K.; Hunt, S.; Teplyakov, A.; Opila, R. L., Applied Surface Science (2010), 257(5), 1469-1472.

18. “Comparison of the sputter rates of oxide films relative to the sputter rate of SiO2,” Baer, D. R.; Engelhard, M. H.; Lea, A. S.; Nachimuthu, P.; Droubay, T. C.; Kim, J.; Lee, B.; Mathews, C.; Opila, R. L.; Saraf, L. V.; et al Journal of Vacuum Science & Technology, A: Vacuum, Surfaces, and Films (2010), 28(5), 1060-1072.

19. “Understanding tunnel magnetoresistance during thermal annealing in MgO-based junctions with CoFeB electrodes,” Wang, W. G.; Ni, C.; Miao, G. X.; Weiland, C.; Shah, L. R.; Fan, X.; Parson, P.; Jordan-sweet, J.; Kou, X. M.; Zhang, Y. P.; et al Physical Review B: Condensed Matter and Materials Physics (2010), 81(14), 144406/1-144406/6.

20. “Effects of boron and phosphorus doping on the photoluminescence of self-assembled germanium quantum dots,” Sustersic, N., Nataraj, L., Weiland, C., Coppinger, M., Shaleev, M. V., Novikov, A. V., Opila, R., Cloutier, S.G., Kolodzey, J., Applied Physics Letters, Volume 94, 2009, Article number 183103.

21. “Reactions of aromatic bifunctional molecules on silicon surfaces: nitrosobenzene and nitrobenzene,” Perrine, K. A., Leftwich, T. R., Weiland, C. R., Madachik, M. R., Opila, R. L. Teplyakov, A. V., Journal of Physical Chemistry C, Volume 113, 2009, pages 6643-6653.

22.  “Correlation of crystalline defects with photoluminescence of InGaN layers,” Faleev, N., Jampan, B., Jani, O., Yu, H. Opila, R. Ferguson, I. Honsberg, C., Applied Physics Letters, Volume 95, Issue 5, 2009, Article number 051915,  DOI: 10.1063/1.3202409

23. “Report on the 47th IUVSTAWorkshop ‘Angle-Resolved XPS: the current status and future prospects for angle-resolved XPS of nano and subnano films’,” A. Herrera-Gomez, J. T. Grant, P. J. Cumpson, M. Jenko, F. S. Aguirre-Tostado, C. R. Brundle, T. Conard, G. Conti, C. S. Fadley, J. Fulghum, K. Kobayashi, L. K¨ov´ er, H. Nohira, R. L. Opila, S. Oswald, R. W. Paynter, R. M. Wallace, W. S. M. Werner and J.Wolstenholmer, Surf. Interface Anal. 2009, 41, 840–857, DOI: 10.1002/sia.3105

24. “Adsorption and reaction of HfCl4 with H2O terminated Si(100)-2×1,” B. Willis, A. Mathew, L. S. Wielunski, and R. L. Opila, Journal of Physical Chemistry, in press, 2008.

25. “Correlation of crystalline defects with photoluminescence of InGaN layers,” N. Faleev, B. R. Jampana, O. Jani, H. Yu, R. Opila, I. Ferguson, and C. Honsberg, Applied Physics Letters, 95, 051915 (2009).

26. “Role of Hydrogen Bonding Environment in Amorphous Silicon Films for Passivation of Crystalline Silicon Based Photovoltaic Devices,” M. Burrows, U. Das, R. Opila, and R. Birkmire, Journal of American Vacuum Society, accepted, 2008.

27. “Adsorption and reaction of HfCl4 with H2O-terminated Si(100)-2Å~1,” Willis, B. G., Mathew A., Wielunski, L. S., Opila, R. L. Journal of Physical Chemistry C, Volume 112, Issue 6, 14 February 2008, Pages 1994-2003.

28. “Room-temperature chemical vapor deposition of aluminum and aluminum oxides on alkanethiolate selfassembled monolayers,” Lu, P., Demirkan, K., Opila, R. L., Walker, A. V., Journal of Physical Chemistry C, Volume 112, Issue 6, 14 February 2008, Pages 2091-2098.

29. “Reactivity and morphology of vapor-deposited Al/polymer interfaces for organic semiconductor devices,” Demirkan, K., Mathew, A., Weiland, C., Reid, M., Opila, R. L., Journal of Applied Physics, Volume 103, Issue 3, 2008, Article number 034505.

30. “Energy level alignment at organic semiconductor/metal interfaces: Effect of polar self-assembled monolayers at the interface,” Demirkan, K., Mathew, A., Weiland, C., Yao, Y., Rawlett, A. M., Tour, J. M., Opila, R. L., Journal of Chemical Physics, Volume 128, Issue 7, 2008, Article number 074705.

31. “Microstructure, magnetic, and spin-dependent transport properties of (Zn,Cr)Te films fabricated by magnetron sputtering,” Wang, W. G., Yee, K. J., Kim, D. H., Han, K. J. Wang, X. R., Ni, C., Moriyama, T., Mathew, A. Opila, R., Zhu, T., Xiao, J. Q., Physical Review B—Condensed Matter and Materials Physics, Volume 77, 2008, Article 155207.

32. “Chemistry and Morphology of Vapor Deposited Al/Polymer Interfaces for Organic Semiconductor Devices,” K.Demirkan, A. Mathew, C. Weiland, M. Reid, and R. L. Opila, Journal of Applied Physics, Accepted 2007.

33. “Room Temperature Chemical Vapor Deposition of Aluminum and Aluminum Oxides on Alkanethiolate Self- Assembled Monolayers,” P. Lu, K. Demirkan, R. L. Opila, A. V. Walker, Journal of Physical Chemistry C, Accepted 2007.

34. Doped self-aligned metallization for solar cells. Addo, Ernest A.; Shah, S. Ismat; Opila, Robert; Barnett, Allen M.; Allison, Kevin; Sulima, Oleg. Journal of Materials Research (2004), 19, 986-995 (2004).

35. X-ray photoelectron spectroscopy of nitromethane adsorption products on Si(100). A model for N 1s corelevel shifts in silicon oxynitride films. Eng, J., Jr.; Hubner, I. A.; Barriocanal, J.; Opila, R. L.; Doren, D. J. Journal of Applied Physics, 95, 1963-1968 (2004).

36. Wet chemical cleaning of InP surfaces investigated by in situ and ex situ infrared spectroscopy. Pluchery, O.; Chabal, Y. J.; Opila, R. L.. Journal of Applied Physics, 94, 2707-2715 (2003).

37. Heteroepitaxial copper phthalocyanine on Au(0 0 1) studied by high-resolution X-ray photoelectron spectroscopy. Park, Kenneth T.; Miller, Alfred; Klier, Kamil; Opila, Robert L.; Rowe, Jack E., Surface Science, 529(3), L285-L292 (2003).

38. Investigation of fluorocarbon plasma deposition from c-C4F8 for use as passivation during deep silicon etching, C. B. Labelle, V. M. Donnelly, G. R. Bogart, R. L. Opila, and A. Kornblit, Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films — November 2004 — Volume 22, Issue 6, pp. 2500-2507

39. Plasma deposition of fluorocarbon thin films from c-C4F8 using pulsed and continuous rf excitation C. B. Labelle, R. L. Opila, and A. Kornblit, Vacuum, Surfaces, and Films — January 2005 — Volume 23, Issue 1, pp. 190-196

40. Wet chemical cleaning of plasma oxide grown on heated (001) InP surfaces, B. Lita, O. Pluchery, R. L. Opila, Y. J. Chabal, G. Bunea, J. P. Holman, E. J. Bekos Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures — July 2004 — Volume 22, Issue 4, pp. 1885-1892

41. Thin Films and Interfaces in Microelectronics: Composition and Chemistry as a Function of Depth, J. Eng and R. L. Opila, Progress in Surface Science, 69, 125-163, (2002).

42. Material and Electrical Characterization of Carbon-Doped Ta2 O5  Films for Embedded Dynamic Random Access Memory Applications, K. Chu, J. P. Chang, M. L. Steigerwald, R. M. Fleming, R. L. Opila, D. V. Lang, R. B. van Dover, and C. D. W. Jones, Journal of Applied Physics, 91, 308-316 (2002).

43. Bond Insertion, Complexation, and Penetration Pathways of Vapor-Deposited Aluminum Atoms with HOand CH3 -Terminated Organic Monolayers, G. L. Fisher, A. V. Walker, A. E. Hooper, T. B. Tighe, K. B. Bahnck, H. T. Skriba, M. D. Reinard, B. C. Haynie, R. L. Opila, N. Winograd, and D. L. Allara, Journal of the American Chemical Society, 124, 5528-5541 (2002).

44. Materials Characterization of Alternative Gate Dielectrics, B. Busch, O. Pluchery, Y. J. Chabal, D. A. Muller, R. L. Opila, J. R. Kwo, and E. Garfunkel, MRS Bulletin, 27, 206- 211 (2002).

45. A Century of Dielectric Science and Technology, Robert L. Opila and Dennis W. Hess, Journal of the Electrochemical Society, 150, S1-S10 (2003).

46. Looking at trace impurities on silicon wafers with synchrotron radiation, Baur, Katharina; Brennan, Sean; Pianetta, Piero; Opila, Robert, Analytical Chemistry 74, 608A-616A (2002).

47. Photoemission study of Zr- and Hf-silicates for use as high-k oxides: Role of second nearest neighbors and interface charge. Opila, R. L.; Wilk, G. D.; Alam, M. A.; van Dover, R. B.; Busch, B. W Applied Physics Letters 81, 1788-1790 (2002).

48. Vibrational study of indium phosphide oxides. Pluchery, Olivier; Eng, Joseph; Opila, Robert L.; Chabal, Yves J., Surface Science (2002), 502-503 75-80 (2002).

49. Thin films and interfaces in microelectronics: composition and chemistry as function of depth. Opila, Robert L.; Eng, Joseph, Jr., Progress in Surface Science, 69, 125-163 (2001).

50. Infrared Spectroscopic Analysis of the Si/SiO2  Interface Structure of Thermally Oxidized Silicon, K. T. Queeney, M. K. Weldon, J. P. Chang, Y. J. Chabal, A. B. Gurevich, J. Sapjeta, R. L. Opila, J. Appl. Phys., 87, 1322-1330 (2000).

51. The Interaction of Vapor-deposited Al Atoms with CO2 H Groups at the surface of a Self-Assembled Alkanethiolate Monolayer on Gold, G. L. Fisher, A. E. Hooper, R. L. Opila, D. L. Allara, N. Winograd, J.Phys. Chem. B, 104, 3267 – 3273 (2000).

52. Profiling Nitrogen in Ultrathin Silicon Oxynitrides with Angle-Resolved X-ray Photoelectron Spectroscopy, J. P. Chang, M. L. Green, V. M. Donnelly, R. L. Opila, J. Eng, J. Sapjeta, P. J. Silverman, B. Weir, H. C. Lu, T. Gustaffson, E. Garfunkel, J. Appl. Phys., 87, 4449 – 4455 (2000).

53. Properties of High κ  Gate Dielectrics Gd2 O3  and Y2 O3  for Si, J. Kwo, M. Hong, A. R. Kortan, K. L. Queeney, Y. J. Chabal, R. L. Opila, D. A. Muller, S. N. G. Chu, B. J. Sapjeta, T. S. Lay, J. P. Mannaerts, T. Boone, H.W. Krautter, J. J. Krajewski, A. M. Sergent, J. M. Rosamilia, J. Appl. Phys., 89, 3920-3927 (2001).

54. The Evolution of Chemical Oxides into Ultrathin Oxides: A Spectroscopic Characterization, J. Eng, R. L. Opila, J. M. Rosamilia, B. J. Sapjeta, Y. J. Chabal, T. Boone, R. Masaitis, T. Sorsch, M. L. Green, Diffus. Defect Data, Pt B, 76-77, 145-148 (2000).

Proceedings

1. “Minimizing shadow losses in III-nitride solar cells,” Melton, A. Jampana, B., Opila, R., Honsberg, C. Jamil, M., Ferguson, I., Proceeding of SPIE, Volume 7409, 2009, Article number 740916, DOI: 10.1117/12.829264

2.  “Utilizing polarization induced band bending for InGaN solar cell design,” Jampana, Balakrishnam R.; Ferguson, Ian T.; Opila, Robert L.; Honsberg, Christiana B., Materials Research Society Symposium Proceedings (2009), 1167(Compound Semiconductors for Energy Applications and Environmental Sustainability), Paper #: 1167-O01-04.

3. “InGaN solar cell design by surface inversion caused by piezoelectric polarization,” Jampana, Balakrishnam; Melton, Andrew; Jamil, Muhammad; Ferguson, Ian; Opila, Robert; Honsberg, Christiana, IEEE Photovoltaic Specialists Conference, 34th, Philadelphia, PA, United States, June 7-12, 2009 (2009), 2025-2028.

4. “GaP films grown on Si by liquid phase epitaxy,” Huang, Susan R.; Lu, Xuesong; Barnett, Allen; Opila, Robert L., IEEE Photovoltaic Specialists Conference, 34th, Philadelphia, PA, United States, June 7-12, 2009 (2009), 1436-1438.

5. “High open circuit voltages on < 50 micron silicon substrates by amorphous silicaon and quinhydrone-methanol passivation,” Chhabra, Bhumika; Honsberg, Christiana B.; Opila, Robert L. IEEE Photovoltaic Specialists Conference, 34th, Philadelphia, PA, United States, June 7-12, 2009 (2009), 1418-1421.

6. “High indium composition (>20%) epi-layers on ZnO substrates for very high efficiency solar cells,” Melton, Andrew; Jampana, Balakrishnam; Li, Nola; Jamil, Muhammad; Zaidi, Tahir; Fenwick, William; Opila, Robert; Honsberg, Christiana; Ferguson, Ian, IEEE Photovoltaic Specialists Conference, 34th, Philadelphia, PA, United States, June 7-12, 2009 (2009), 1122-1125.

7. “Gallium Phosphide solar cells for multi-junction systems,” Lu, Xuesong; Huang, Susan R.; Opila, Robert L.; Barnett, Allen IEEE Photovoltaic Specialists Conference, 34th, Philadelphia, PA, United States, June 7-12, 2009 (2009), 1113-1116.

8.  ”InGaN solar cell design by surface inversion caused by piezoelectric polarization ,” Jampana, Balakrishnam; Melton, Andrew; Jamil, Muhammad; Ferguson, Ian; Opila, Robert; Honsberg, Christiana, IEEE Photovoltaic Specialists Conference, 34th, Philadelphia, PA, United States, June 7-12, 2009 (2009), 1109-1112.

9. “Bonding States and Coverage Calculations for HfO2  Deposited on H2 O Terminated Si(100)-2×1 Using Atomic Layer Deposition,” A. Mathew, L. S. Weilunski, R. L. Opila, and B. G. Willis, ECS Transactions—Physics and Technology of High-k Gate Dielectrics V, 11, 183-189 (2007).

10. “Evaluation of HF treated amorphous silicon for photoemission determined electronic levels,” M. Burrows, R. Opila, K. Demirkan, M. Lu, U. Das, S. Bowden and R. Birkmire, 22nd  European Photovoltaic Solar Energy Conference, Milan, Italy, 2DV.2.29 (2007).

11. “HF treatment of a-Si:H films for PV processing,” M. Burrows, U. Das, M. Lu, S. Bowden, R. Opila, R. Birkmire, Materials Research Society Symposium Proceedings, Vol 989, A29-06 (2007).

12. “Improved passivation of a-Si:H / c-Si interfaces through film restructuring,” Burrows, M. Z., Das, U.K., Bowden, S., Hegedus, S. S., Opila, R. L., Birkmire, R. W., Materials Research Society Symposium Proceedings, Volume 1066, 2008, pages 41-46.

13. X-ray Photoelectron Spectroscopy of High-K Dielectrics, A. Mathew, K. Demirkan, C. G. Wang, G. D. Wilk, D. G. Watson, and R. L. Opila, AIP Conference Proceedings — September 9, 2005 — Volume 788, pp. 85-91. Characterization and Metrology for ULSI Technology 2005.

14. STM and XPS investigation of molecular electronics bonded to substrates, M. W. Haimbodi, A. M. Rawlett, C. Weiland, K. Demirkan, A. Anshuman, and R. L. Opila, Proceedings of SPIE — Volume 5592 Nanofabrication: Technologies, Devices, and Applications, Warren Y. Lai, Stanley Pau, O. Daniel Lopez, Editors, January 2005, pp. 100-107

15. Photoelectron spectroscopy investigation of high-k dielectrics. Demirkan, Korhan; Mathew, Anoop; Opila, Robert L. Proceedings – Electrochemical Society, 2003-22(Physics and Technology of High-k Gate Dielectrics II), 299- 306 (2004).

16. Screen-printable doped self-aligned metallization for fabrication of alloyed metal contacts in solar cell fabrication. Addo, Ernest A.; Shah, Ismat; Opila, Robert; Barnett, Allen. M.; Allison, Kevin; Sulima, Oleg, Materials Research Society Symposium Proceedings, 744 (Progress in emiconductors II–Electronic and Optoelectronic Applications), 225-230 (2003).

17. XPS investigation of oxidation of Cu seed layers for microelectronics. Opila, R. L.; Krautter, H. W.; Takahashi, K. M. Proceedings of the Electrochemical Society, 2001-5(State-of-the-Art Application of Surface and Interface Analysis Methods to Environmental Material Interactions), 307-313 (2001).

18. Material and electrical characterization of carbon-doped Ta2O5 films for embedded DRAM applications. Chu, Karen; Cho, Byeong-Ok; Chang, Jane P.; Steigerwald, Mike L.; Fleming, Robert M.; Opila, Robert L.; Lang, Dave V.; Van Dover, R. Bruce; Jones, Chris D. W. Materials Research Society Symposium Proceedings, 672(Mechanisms of Surface and Microstructure Evolution in Deposited Films and Film Structures), O8.39.1- O8.39.6 (2001).

19. Corrosion and reliability challenges in microelectronics. Comizzoli, R. B.; Crane, G. R.; Eng, J.; Frankenthal, R. P.; Garfias, L.; Jankoski, C. A.; Krautter, H. W.; Opila, R. L.; Peins, G. A.; Psota-Kelty, L. A.; Siconolfi, D. J.; Sinclair, J. D. Interfinish 2000, [Internationale Oberflaechenkongress], 15th, Garmisch Partenkirchen, Germany,Sept. 13-15, 2000, 31-32. (2000).

20. The Effect of Dilute Cleaning and Rinsing Chemistries on Transition Metal Removal and Si Surface Microroughness, J. P. Chang, J. Sapjeta, J. M. Rosamilia, T. Boone, J. Eng, Jr., R. L. Opila, S. Brennan, C. Wiemer, and P. Pianetta, Proceedings of the Electrochemical Society, 99-36, Cleaning Technology in Semiconductor Device Manufacturing, 17-24 (2000).

21. Ultraviolet Light Stimulated Halogen Chemistry on Cleaning Silicon Surfaces, J. P. Chang, J. Eng, Jr., R. L. Opila, P. Cox, P. Pianetta, Proceedings of the Electrochemical Society, 99-36, Cleaning Technology in Semiconductor Device Manufacturing, 129-136 (2000).

22. The Structure and Composition of Wet Chemical Oxides: A Photoemission and Infrared Study, J. Eng, R. L. Opila, Y. J. Chabal, J. M. Rosamilia, M. L. Green, Proceedings of the Electrochemical Society, 99-36, Cleaning Technology in Semiconductor Device Manufacturing, 261-269 (2000).

23. Study of Metal/Barrier/Low-κ  Interfaces for Interlayer Dielectric Applications, J. P. Chang, C. B. Case, H. W. Krautter, J. Sapjeta, R. L. Opila, M. A. Decker, Proceedings of the Electrochemical Society, 99-31, Interconnect and Contact Metallization for ULSI, 261-269 (2000).

24. High Performance, Highly Reliable Gate Oxide Formed with Rapid thermal Oxidation In-Situ Steam Generation (ISSG) Technique, Y. Ma, Y. N. Chen, M. M. Brown, F. Li, Y. Chen, J. Eng, R. L. Opila, Y. J. Chabal, B. J. Sapjeta, D. A. Muller, G. C. Xing, T. Trowbridge, M. Khau, N. Tam, Proceedings of the Electrochemical Society, 2000-9, Rapid Thermal and Other Short-Time Processing Technologies, 179-186 (2000).

25. Surface Composition of a Norbornene-Maleic Anhydride-Based 193-nm Photoresists for Different Photoacid Generators as Determined by X-ray Photoelectron Spectroscopy, H. W. Krautter, F. M. Houlihan, R. S. Hutton, I. L. Rushkin, and R. L. Opila, Proceedings of SPIE, International Society of Optical Engineers, Pt. 2, Advances in Resist Technology and Processing XVIII, 1070-1078 (2000).

Patents

1. Process for removing metals from solvents used in the manufacture of semiconductor wafers, Yaw S. Obeng, Robert L. Opila, Ramaswamy S. Raghavan, US Patent 6133158 (2000).

2. Vapor deposition process for making compound films, Anthony Michael Desantolo, Kathleen S. Krisch, Mary Louise Mandich, Robert L. Opila, Marcus Weldon, US Patent 5976623 (2000).

3. Electrical Interconnection by a composite medium, Robert L. Opila, US Patent 5045249 (1991).

Books Edited

1. Polymer/Inorganic Interfaces,  MRS Proceedings Volume 304, Symposium held April 14-16, 1993, San Francisco, CA. Editors, Robert L. Opila, F. James Boerio, A. W. Czanderna

2. Polymer/Inorganic Interfaces II,  MRS Proceedings Volume 385, Symposium held April 18-20. 1995, San Francisco, CA. Editors, Lawrence T. Drzal, Robert L. Opila, Nicholas Peppas, Carol Schutte.

3. Chemical Mechanical Planarization in IC Device Manufacturing II,  ECS Proceedings Volume 98-7, Symposium held May 5 –7, 1998, San Diego, CA. Editors I. Ali, S. Raghavan, R. L. Opila

4. Chemical Mechanical Planarization in IC Device Manufacturing III,  ECS Proceedings Volume 99-37, Symposium held October 20-22, 1999, Honolulu, Hawaii. Editors R. L. Opila, Y. Homma, Iqbal Ali, C. Reidsma-Simpson, Y. A. Arimoto, K. B. Sundaram.

5. Chemical Mechanical Planarization in IC Device Manufacturing IV,  ECS Proceedings Volume 2000-26, Symposium held October 23-25, 2000, Phoenix, Arizona. Editors R. L. Opila, C. Reidsma-Simpson, K. B. Sundaram, S. Seal.

6. Proceedings of the Seventh International Symposium on Cleaning Technology in Semiconductor Device Manufacturing,  held in September 2001, in San Francisco, California. [In: Proc. – Electrochemical Soc., 2002; 2001-26]. (2002) Editors, Ruzyllo, J.; Hattori, T.; Opila, R. L.; Novak, R. E.

7. Thin Film Materials, Processes, and Reliability.  (Proceedings of the International Symposia held 2-7 September 2001, in San Francisco, California.) [In: Proc. – Electrochem. Soc., 2001; 2001-24]. (2001) Editors, Mathad, G. S.; Engelhardt, M.; Opila, R. L.; Rathore, H. S.; Yang, M..

8. Cleaning Technology in Semiconductor Device Manufacturing VIII.  (Proceedings of Eight International Symposium held October 2003 in Orlando Florida.)  [In: Proc. – Electrochem. Soc.; 2004, 2003-26].  (2004) Ruzyllo, Jerzy; Hattori, Takeshi; Opila, Robert L.; Novak, Riehard E.; Editors.

9. Chemical Mechanical Planarization V.  (Proceedings of the International Symposium held 12-17 May 2002 in Philadelphia, Pennsylvania.) [In: Proc.-Electrochem. Soc., 2002; 2002-1]. Seal, S.; Opila, R. L.; Reidsema Simpson, C.; Sundaram, K.; Huff, H.; Suni, I. I.; Editors. (2002).