Publications

PUBLICATIONS:

Invited Reviews, Concepts, Books

149. Dybowski, C. and Teplyakov, A. Essential Data and Equations for a Course in Physical Chemistry, 3rd Edition, D & T Publishing, 2021, ISBN-13 978-0-578-90215-9

148. Williams, M. G. and Teplyakov, A. V. Chemical Functionalization of Surfaces: Preparation for Secondary Chemical Modification. Chapter in “Encyclopedia of Interfacial Chemistry – Surface Science and Electrochemistry”, 2017, Elsevier, Inc., DOI: 10.1016/B978-0-12-409547-2.13559-0

147. Gao, F. and Teplyakov, A. V. Challenges and Opportunities in Chemical Functionalization of Semiconductor Surfaces. Invited Concept Article, Appl. Surf. Sci. 2017, 399, 375-386, DOI: 10.1016/j.apsusc.2016.12.083. This paper is highlighted on Elsevier Physics Twitter Channel:  Elsevier Physics‏ @ElsevierPhysics; Challenges & Opportunities in #ChemicalFunctionalization of #Semiconductor Surfaces.

146. Teplyakov, A. V. Adsorption on Semiconductor Surfaces. Chapter in “Surface and Interface Science. Volume 6: Solid-Gas Interfaces II”. Edited book, ed.: Klaus Wandelt, 2015, John Wiley & Sons, Inc.

145. Bent, S. F. and Teplyakov, A. V. Semiconductor Surface Functionalization for Advances in Electronics, Energy Conversion, and Dynamic Systems. J. Vac. Sci Technol. A, 2013, 31(5), 050810-1-12, DOI: 10.1116/1.4810784. Invited Review Article for the Special AVS 60th Anniversary Issue, awarded top 20 most downloaded articles in JVST.

144. Tian, F. and Teplyakov, A. V. Silicon Surface Functionalization Targeting Si-N Linkages. Langmuir 2013, 29(1), 13-28, DOI: 10.1021/la303505s. Invited Feature Article, Image featured on the cover of the journal.

143. Teplyakov, A. V. Influence of Functional Groups in Substituted Aromatic Molecules on the Selection of Reaction Channel, Chapter 6. In “Functionalization of Semiconductor Surfaces.” Edited book, editors: Dr. Feng Tao and Prof. Steven L. Bernasek, 2012, John Wiley & Sons, Inc., Hoboken, NJ, ISBN: 978-0-470-56294-9.

142. Dybowski, C. and Teplyakov, A. Essential Data and Equations for a Course in Physical Chemistry, 2nd Edition, D & T Publishing, 2011, ISBN: 978-0-615-48597-3.

141. Perrine, K. A. and Teplyakov, A. V. Reactivity of Selectively Terminated Single Crystal Silicon Surfaces. Invited Review. Chem. Soc. Rev. 2010, 39, 3256 – 3274.

140. Dybowski, C. and Teplyakov, A. Essential Data and Equations for a Course in Physical Chemistry, Pearson Publishing, 2009, ISBN-13: 978-0-558-30403-4; ISBN-10: 0-558-30403-6.

139. Leftwich, T. R. and Teplyakov, A. V. Chemical Manipulation of Multifunctional Hydrocarbons on Silicon Surfaces. Invited Review. Surf. Sci. Rep. 2008, 63, 1-71. This review article received Top Cited Author Surface Science Reports Award based on Scopus citations from 2005-2009.

138. Rodríguez-Reyes, J. C. F. and Teplyakov, A. V. Chemistry of Organometallic Compounds on Silicon: The First Step in Film Growth. Invited Concept Paper. Chemistry-A European Journal 2007, 13, 9164-9176.

List of Publications:

137. Silva-Quinones, D., Butera, R. E., Wang, G. T., and Teplyakov, A. V. Solution Chemistry to Control Boron-Containing Monolayers on Silicon: Reactions of Boric Acid and 4-Fluorophenylboronic Acid with H- and Cl-terminated Si(100). Langmuir 2021, 37, 7194-7202, DOI: 10.1021/acs.langmuir.1c00763.

136. Lalaguna, L. P., Hedgeland, H., Ryan, P. T. P., Warschkow, O., Muntwiler, M. K., Teplyakov, A. V., Schofield, S. R., and Duncan, D. A. Determination of the Preferred Reaction Pathway of Acetophenone on Si(001) Using Photoelectron Diffraction. J. Phys. Condens. Matter 2021, 33, 214002, DOI: 10.1088/1361-648X/abe6dd.

135. Konh, M., Janotti, A., and Teplyakov, A. V. Molecular Mechanism of Thermal Dry Etching of Iron in a Two-Step Atomic Layer Etching Process: Chlorination Followed by Exposure to Acetylacetone. J. Phys. Chem. C 2021, 125(13), 7142-7154, DOI: 10.1021/acs.jpcc.0c10556.

134. Cañón, J. and Teplyakov, A. V. XPS Characterization of Cobalt Impregnated SiO2 and g-Al2O3. Surf. Interface Anal. 2021, 53, 475-481, DOI: 10.1002/sia.6935.

133. Larrabure, G., Chero-Osorio, S., Silva-Quinones, D., Benndorf, C., Williams, M., Gao, F., Gamarra, C., Alarcon, A., Segura, C., Teplyakov, A., Rodriguez-Reyes, J. C. F. Surface Processes at a Polymetallic (Mn-Fe-Pb) Sulfide Subject to Cyanide Leaching under Sonication Conditions and with an Alkaline Pretreatment: Understanding Differences in Silver Extraction with X-ray Photoelectron Spectroscopy (XPS). Hydrometallurgy 2021, 200, 105544, DOI: 0.1016/j.hydromet.2020.105544.

132. He, C., Cai, X., Wei, S.-H., Janotti, A., and Teplyakov, A. V. Self-Catalyzed Sensitization of CuO Nanowires via Solvent-Free Click Reaction. Langmuir 2020, DOI: 10.1021/acs.langmuir.0c02262.

131. Silva-Quinones, D., He, C., Dwyer, K. J., Butera, R. E., Wang, G. T., and Teplyakov, A. V. Reaction of Hydrazine with Solution- and Vacuum-Prepared Selectively Terminated Si(100) Surfaces: Pathways to the Formation of Direct Si-N Bonds. Langmuir 2020, 36, 12866-12876,  DOI: 10.1021/acs.langmuir.0c02088.

130. Silva-Quinones, D., He, C., Butera, R. E., Wang, G. T., and Teplyakov, A. V. Reaction of BCl3 with H- and Cl-Terminated Si(100) as a Pathway for Selective Monolayer Doping through Wet Chemistry. Appl. Surf. Sci. 2020, 533, 146907, DOI: 10.1016/j.apsusc.2020.146907.

129. Rani, S., Byron, C., and Teplyakov, A. V. Formation of Silica-Supported Platinum Nanoparticles as a Function of Preparation Conditions and Boron Impregnation. J. Chem. Phys. 2020, 152, 134701, DOI:10.1063/1.5142503.

128. Portilla, R. E., He, C., Jacome-Collazos, M., Visurraga, K., Chirif, H., Teplyakov, A. V., and Rodríguez-Reyes, J. C. F. Acidic Pretreatment of a Copper-Silver Ore and its Beneficial Effect on Cyanide Leaching. Minerals Engineering 2020, 149, 106233, DOI:10.1016/j.mineng.2020.106233.

127. Konh, M., Lien, C., Cai, X., Wei, S.-H., Janotti, A., Zaera, F, and Teplyakov, A. V. ToF-SIMS Investigation of the Initial Stages of MeCpPt(CH3)3 Adsorption and Decomposition on Nickel Oxide Surfaces: Exploring the Role and Location of the Ligands. Organometallics 2020, 39(7), 1024-1034, DOI:10.1021/acs.organomet.9b00781.

126. Byron, C., Bai, S., Celik, G., Ferrandon, M. S., Liu, C., Ni, C., Mehdad, A., Delferro, M., Lobo, R. F., and Teplyakov, A. V. Role of Boron in Enhancing the Catalytic Performance of Supported Platinum Catalysts for Non-Oxidative Dehydrogenation of n-Butane. ACS Catal. 2020, 10, 1500-1510, DOI: 10.1021/acscatal.9b04689.

125. Chen, B., Qin, X., Lien, C., Bouman, M., Konh, M., Duan, Y., Teplyakov, A. V., and Zaera, F. Thermal Chemistry of Metal Organic Compounds Adsorbed on Oxide Surfaces. Organometallics 2020, 39(7), 928-940, DOI:10.1021/acs.organomet.9b00636.

124. O’Donnell, K. M., Byron, C., Moore, G., Thomsen, L., Warschkow, O., Teplyakov, A. V., and Schofield, S. R. Dissociation of CH3−O as a Driving Force for Methoxyacetophenone Adsorption on Si(001). J. Phys. Chem. C 2019, 123, 22239−22249, DOI: 10.1021/acs.jpcc.9b04954.

123. Konh, M., Lien, C., Zaera, F, and Teplyakov, A. V. Application of Time-of-Flight Secondary Ion Mass Spectrometry to the Detection of Surface Intermediates during the First Cycle of Atomic Layer Deposition (ALD) of Platinum on Silica Surfaces. Appl. Surf. Sci. 2019, 488, 468-476, DOI: 10.1016/j.apsusc.2019.05.209

122. He, C., Janzen, R., and Teplyakov, A. V. ‘Clickable’ Metal Oxide Nanomaterials Surface-Engineered by Gas-Phase Covalent Functionalization with Prop-2-ynoic Acid. Chem. Mater. 2019, 31, 2068-2077, DOI: 10.1021/acs.chemmater.8b05124.

121. Sullivan, S. P., Leftwich, T. R., Goodwin, C. M., Ni, C., Teplyakov, A. V., and Beebe, T. P., Jr. Growth and Chemical Modification of Silicon Nanostructures Templated in Molecule Corrals: Parallels with the Surface Chemistry of Single Crystalline Silicon. Surf. Sci. 2019, 683, 38-45, DOI: 10.1016/j.susc.2019.01.010.

120. Konh, M., He, C., Lin, X., Guo, X., Pallem, V., Opila, R. L., Teplyakov, A. V., Wang, Z., and Yuan, B. Molecular Mechanisms of Atomic Layer Etching of Cobalt with Molecular Chlorine and Diketones. J. Vac. Sci. Technol. A. 2019, 37, 021004; DOI: 10.1116/1.5082187. This article was chosen it to be promoted as an Editor’s Pick.

119. Silva-Quiñones, D., He, C., Jacome-Collazos, M., Benndorf, C., Teplyakov, A. V., and Rodriguez-Reyes, J. C. F. Identification of Surface Processes in Individual Minerals of a Complex Ore through the Analysis of Polished Sections Using Polarization Microscopy and X-ray Photoelectron Spectroscopy (XPS), Minerals 2018, 8, 427; DOI: 10.3390/min8100427.

118. He, C. and Teplyakov, A. V. 29,31-HPhthalocyanine Covalently Bonded Directly to a Si(111) Surface Retains Its Metalation Ability. Langmuir2018, 34(37), 10880–10888, DOI: 10.1021/acs.langmuir.8b02259.

117. Konh, M., He, C., Li, Z., Bai, S., Galoppini, E., Gundlach, L., and Teplyakov, A. V. Comparison of ZnO Surface Modification with Gas-Phase Propiolic Acid at High and Medium Vacuum Conditions. J. Vac. Sci. Technol. A2018, 36(4), 041404-1-8, DOI: 10.1116/1.5031945.

116. Lien, C., Konh, M., Chen, B., Teplyakov, A. V., and Zaera, F. Gas-Phase Electron-Impact Activation of Atomic Layer Deposition (ALD) Precursors: MeCpPtMe3. J. Phys. Chem. Lett.2018, 9(16), 4602–4606, DOI: 10.1021/acs.jpclett.8b02125

115. Zhao, J., Konh, M., and Teplyakov, A. V. Surface Chemistry of Thermal Dry Etching of Cobalt Thin Films Using Hexafluoroacetylacetone (hfacH). Appl. Surf. Sci.2018, 455, 438-445, DOI: 10.1016/j.apsusc.2018.05.182.

114. Williams, M. G. and Teplyakov, A. V. Indirect Photopatterning of Functionalized Organic Monolayers via Copper-Catalyzed “Click Chemistry”. Appl. Surf. Sci.2018, 447, 535-541, DOI: 10.1016/j.apsusc.2018.04.007.

113. Barry, S. T., Teplyakov, A. V., and Zaera, F. The Chemistry of Inorganic Precursors during the Chemical Deposition of Films on Solid Surfaces. Acc. Chem. Res. 2018,51, 800-809,DOI 10.1021/acs.accounts.8b00012.

112. He, C., Abraham, B., Fan, H., Harmer, R., Li, Z., Galoppini, E., Gundlach, L, and Teplyakov, A. V. Morphology-Preserving Sensitization of ZnO Nanorod Surfaces via Click-Chemistry. J. Phys. Chem. Lett. 2018, 9(4), 768-772, DOI: 10.1021/acs.jpclett.7b03388.

111. Duan, Y., Rani, S., Newberg, J. T., and Teplyakov, A. V. Investigation of the influence of oxygen plasma on supported silver nanoparticles. J. Vac. Sci. Technol. A 2018, 35(1), 01B101-1-8, DOI: 10.1116/1.4986208.

110. Zhao, J., Gao, F., Pujari, S. P., Zuilhof, H., and Teplyakov, A. V. Universal Calibration of Computationally Predicted N 1s Binding Energies for Interpretation of XPS Experimental Measurements, Langmuir2017, 33(41), 10792–10799; DOI:10.1021/acs.langmuir.7b02301.

109. Duan, Y., Rani, S., Zhang, Y., Ni, C., Newberg, J. T., and Teplyakov, A. V. Silver Deposition onto Modified Silicon Substrates. J. Phys. Chem. C2017, 121, 7240-7247, DOI: 10.1021/acs.jpcc.6b12896.

108. Duan, Y., Rani, S., Zhang, Y., Ni, C., Newberg, J. T., and Teplyakov, A. V. Silver Deposition onto Modified Silicon Substrates. J. Phys. Chem. C2017, 121, 7240-7247, DOI: 10.1021/acs.jpcc.6b12896.

107. Zhao, J., Noffke, B. W., Raghavachari, K., and Teplyakov, A. V. Temperature-Programmed Desorption (TPD) and Density Functional Theory (DFT) Study Comparing the Adsorption of Ethyl Halides on the Si(100) Surface. J. Phys. Chem. C2017, 121, 7208-7213, DOI: 10.1021/acs.jpcc.6b12184.

106. Gao, F. and Teplyakov, A. V. A Monolayer of Hydrazine Facilitates Direct Covalent Attachment of C60Fullerene to a Silicon Surface. Langmuir2017, DOI:10.1021/acs.langmuir.6b03975.

105. Duan, Y. and Teplyakov, A. V. Deposition of Copper from Cu(I) and Cu(II) Precursors onto HOPG Surface: Role of Surface Defects and Choice of a Precursor. J. Chem. Phys.2017, 146, 052814-1-8.

104. Chen, B., Duan, Y., Yao, Y., Ma, Q., Coyle, J. P., Barry, S. T., Teplyakov, A. V., and Zaera, F. Activation of the Dimers and Tetramers of Metal Amidinate ALD Precursors upon Adsorption on Silicon Oxide Surfaces. J. Vac. Sci. Technol. A2017, 35(1), 01B124.

103. Williams, M. G., Gao, F., BenDhiab, I. and Teplyakov, A. V. Carbon Nanotubes Covalently Attached to Functionalized Surfaces Directly through the Carbon Cage. Langmuir2017, 33 (5), 1121–1131. This work is featured on the cover of the issue.

102. Zhao, J., Madachik, M. R., O’Donnell, K. M., Moore, G., Thomsen, L., Warschkow, O., Schofield, S. R., and Teplyakov, A. V. Adsorption and Dissociation of a Bicyclic Tertiary Diamine, Triethylenediamine, on a Si(100)-2×1 Surface. J. Phys. Chem. C,2016, 120 (50), 28672-28681.

101. Duan, Y., Pirolli, L., and Teplyakov, A. V.  Investigation of the H2S Poisoning Process for Sensing Composite Material Based on Carbon Nanotubes and Metal Oxides. Sensors and Actuators B, 2016, 235, 213-221.

100. Kung, S. and Teplyakov, A. V. Transmetalation Process as a Route for Preparation of Zinc Oxide-Supported Copper Nanoparticles. Langmuir, 2016, 32(28), 7029–7037.

99. Gao, F. and Teplyakov, A. V. Dehydrohalogenation Reaction of Phenylhydrazine with Cl-Terminated Si(111) Surfaces. J. Phys. Chem. C, 2016, 120 (10), 5539-5548.

98. Liu, Y., Williams, M. G. Miller, T., and Teplyakov, A. V. Nanoparticle Layer Deposition for Highly Controlled Multilayer Formation Based on High-Coverage Monolayers of Nanoparticles. Thin Solid Films2016, 598,16-24.

97. Williams, M. G. and Teplyakov, A. V. Building High-Coverage Monolayers of Covalently Bound Magnetic Nanoparticles. Appl. Surf. Sci.2016, 388(Part A), 461-467

96. Duan, Y.; Gao, F., and Teplyakov, A. V. Role of the Deposition Precursor Molecules in Defining Oxidation State of Deposited Copper in Surface Reduction Reactions on H-Terminated Si(111) Surface. J. Phys. Chem. C2015, 119, 27018-27027.

95. Zhao, J; Lin, J.-M.; Rodríguez-Reyes, J. C. F. and Teplyakov, A. V. Interpretation of Temperature-Programmed Desorption Data with Multivariate Curve Resolution: Distinguishing Sample and Background Desorption Mathematically. J. Vac. Sci. Technol. A 2015, 33(6), 061406-1-7.94.

94. Kung, H. and Teplyakov, A. V. Selectivity and Mechanism of Thermal Decomposition of b-diketones on ZnO Powder. J. Catal. 2015, 330, 145-153.

93. Kung, H. and Teplyakov, A. V. In-situ Investigation of Organic Ligand Displacement Processes on ZnO Powder Surface. J. Phys. Condens. Matter. 2015, 27, 054007 (Invited article for Special Issue entitled “Organic molecules on inorganic surfaces “).

92. Gao, F. and Teplyakov, A. V. Reaction of Hydrazine with a Cl-terminated Si(111) Surface. J. Phys. Chem. C. 2014, 118, 27998-28006.

91. Cui, Y., Tian, F., Gao, F. and Teplyakov, A. V. Building organic monolayers based on fluorinated amines on the Si(111) surface. J. Phys. Chem. C. 2014,118, 26721-26728.

90. Gao, J and Teplyakov, A. V. Chemical Transformations of Acetone on ZnO Powder. J. Catal. 2014,319, 136-141.

89. Miller, T.; Pirolli, L.; Deng, F., Ni, C. and Teplyakov, A. V. Structurally Different Interfaces between Electrospark-Deposited Titanium Carbonitride and Tungsten Carbide Films on Steel. Surf. Coat. Technol. 2014, DOI: 10.1016/j.surfcoat.2014.07.076.

88. Provisional Patent Application“Nanoparticle Layer Deposition” (Appl. 61/948,734, March 6, 2014).

87. Miller, T. and Teplyakov, A. V. Attachment Chemistry of PCBM to a Primary-Amine-Terminated Organic Monolayer on a Si(111) Surface. Langmuir, 2014, 30, 5105-5114.

86. Gao, J. and Teplyakov, A. V. Thermal Transformations of 2-Chlorophenol on a Surface of ZnO Powder Catalyst, Catal. Today2014, 238, 111-117.

85. Tian, F., Cui, Y. and Teplyakov, A. V. Nitroxidation of H-terminated Si(111) Surfaces with Nitrobenzene and Nitrosobenzene, J. Phys. Chem. C2014, 118(1), 502-512.

84. Kung, H. and Teplyakov, A. V. Formation of Copper Nanoparticles on ZnO Powder by a Surface-Limited Reaction, J. Phys. Chem. C2014, 118(4), 1990-1998.

83. Liu, Y., RamaRao, N., Miller, T., Hadjipanayis, G. and Teplyakov, A. V. Controlling physical properties of iron nanoparticles during assembly by “click chemistry”. J. Phys. Chem. C2013, 117, 19974-19983.

82. Lin, J.-M. and Teplyakov, A. V. Computational Investigation of Surface Reactivity of Functionalized Silicon Surfaces in Deposition Processes. Theor. Chem. Acc. 2013, 132, 1404-1-14.

81. Tian, F., Taber, D. F. and Teplyakov, A. V. An –NH- terminated silicon surface and a method for its preparation. US Patent: US 20130287667 A1,2013.

80. Gao, J. and Teplyakov, A. V. Surface species formed during thermal transformation of ethanol on ZnO powder. J. Catal. 2013, 300, 163-173.

79. Lin, J.-M.; Rodríguez-Reyes, J. C. F. and Teplyakov, A. V. Competing reactions during metalorganic deposition: Ligand-exchange versus direct reaction with the substrate surface. J. Vac. Sci. Technol. A2013, 31(2), 021401-1-021401-17.

78. Liu, Y.; Chen, J. and Teplyakov, A. V. Chemical passivation processes for biofunctionalization schemes on semiconductors surfaces. Langmuir2012, 28 (44), 15521-15528.

77. Liu, Y. and Teplyakov, A. V. Using a Combination of Microscopy and Spectroscopy to Confirm Covalent Bonding of DNA on Functionalized Semiconductor Surfaces, SurFACTS in Biomaterials, 2012, 17 (4), 10-11.

76. Miller, T.; Lin, J.-M.; Pirolli, L.; Coquilleau, L.; Luharuka, R. and Teplyakov, A. V. Investigation of thin titanium carbonitride coatings deposited onto stainless steel. Thin Solid Films2012, 522, 193-198.

75. Perrine, K. A.; Lin, J.-M. and Teplyakov, A. V. Controlling the formation of metallic nanoparticles on functionalized silicon surfaces. J. Phys. Chem. C2012, 116 (27), 14431–14444.

74. Tian, F., Yang, D., Opila, R. L. and Teplyakov, A. V. Chemical and electrical passivation of Si(111) surfaces. Appl. Surf. Sci.2012, 258, 3019-3026.

73. Perrine, K. A., Rodríguez-Reyes, J. C. F. and Teplyakov, A. V. Simulating the reactivity of disordered surface of the TiCN thin film. J. Phys. Chem. C2011, 115, 15432-15439.

72. Tian, F., Taber, D. F. and Teplyakov, A. V. –NH- termination on Si(111) surface by wet chemistry. J. Am. Chem. Soc.2011, 133, 20769-20777.

71. Polyakova (Stolyarova), E., Rim, K. T., Eom, D., Douglass, K., Opila, R., Heinz, T., Teplyakov, A. V. and Flynn, G. W. Scanning tunneling microscopy and X-ray photoelectron spectroscopy studies of graphene films prepared by sonication-assisted dispersion. ACS Nano2011, 5(8), 6102-6108. This work is highlighted in nanotechweb.org (http://nanotechweb.org/cws/article/tech/46735).

70. Bent, S. F.; Kachian, J. S.; Rodríguez-Reyes, J. C. F. and Teplyakov, A. V. Tuning the reactivity of semiconductor surfaces by functionalization with amines of different basicity. PNAS2011, 108(3), 956-960.

69. Douglass, K.; Hunt, S.; Teplyakov, A. and Opila, R. Surface cleaning procedures for thin films of indium gallium nitride grown on sapphire. Appl. Surf. Sci.2010, 257, 1469-1472.

68. Rodríguez-Reyes, J. C. F., Teplyakov, A. V. and Brown, S. D.Qualitative and quantitative analysis of complex temperature-programmed desorption data by multivariate curve resolution. Surf. Sci. 2010, 604, 2043-2054

67. Tian, F., Ni, C. and Teplyakov, A. V. Integrity of functional self-assembled monolayers on hydrogen-terminated silicon-on-insulator wafers. Appl. Surf. Sci.2010, 257(4), 1314-1318.

66. Perrine, K. A. and Teplyakov, A. V. Metallic nanostructure formation limited by the surface hydrogen on silicon. Langmuir2010, 26(15), 12648–12658.

65. Rodríguez-Reyes, J. C. F., Ni, C., Bui, H. P., Beebe, T. P., Jr., and Teplyakov, A. V. Reversible tuning of the surface chemical reactivity of titanium nitride and nitride-carbide diffusion barrier thin films. Chem. Mater.2009, 21(21), 5163-5169.

64. Madachik, M. R. and Teplyakov, A. V. Coadsorption of ethylene and nitrobenzene on Si(100)-2×1: Towards surface patterning at the molecular level. J. Phys Chem. C2009, 113, 18270-18275.

63. Zhang, X., Antonopoulos, I. H., Kumar, S., Chen, J., and Teplyakov, A. V. Tuning the Geometry of Shape-restricted DNA Molecules on the Functionalized Si(111). Appl. Surf. Sci.2009, 256, 815-818.

62. Leftwich, T. R. and Teplyakov, A. V. Calibration of computationally predicted N 1sbinding energies by comparison with X-ray photoelectron spectroscopy measurements. J. Electr. Spec. Rel. Phenom.2009, 175, 31-40.

61. Zhang, X., Kumar, S., Chen, J. and Teplyakov, A. V. Covalent attachment of DNA molecules on amine-functionalized Si(111) surface. Surf. Sci.2009, 603, 2445-2475.

60. Perrine, K. A., Leftwich, T. R., Weiland, C., Madachik, M. R., Opila, R. L. and Teplyakov, A. V. Reactions of aromatic bifunctional molecules on silicon surfaces: nitrosobenzene and nitrobenzene. J. Phys. Chem. C2009, 113(16), 6643–6653.

59. Leftwich, T. R., Madachik, M. R. and Teplyakov, A. V. Dehydrative cyclocondensation reactions on hydrogen-terminated Si(100) and Si(111): An ex situtool for the modification of semiconductor surfaces. J. Am. Chem. Soc. 2008, 130, 16216-16223.This work is highlighted in Chemical and Engineering News, November 24, 2008.

58. Rodríguez-Reyes, J. C. F. and Teplyakov, A. V. Mechanisms of adsorption and decomposition of metal alkylamide precursors for ultrathin film growth. J.Appl. Phys.2008, 104, 084907-1-084907-6.

57. Rodríguez-Reyes, J. C. F. and Teplyakov, A. V. Role of surface strain in the subsurface migration of adsorbates on silicon. Phys Rev. B. 2008, 78, 165314-1-165314-14.

56. Madachik, M. and Teplyakov, A. V. Unique lack of chemical reactivity for 2,3-dimethyl-2-butene on a Si(100)-2×1 surface. J. Vac. Sci. Technol. B 2008, 26(5), 1241-1247.

55. Rodríguez-Reyes, J. C. F. and Teplyakov, A. V. Chemisorption of tetrakis-dimethylamido-titanium on Si(100)-2×1: C-H and C-N bond reactivity leading to low-temperature decomposition pathways. J. Phys. Chem. C2008, 112, 9695-0705.

54. Perrine, K. A., Skliar, D. B., Willis, B. G. and Teplyakov, A. V. Molecular level investigation of 2,2,6,6-tetramethyl-3,5-heptanedione on Si(100)-2×1: Spectroscopic and computational studies, Surf. Sci.2008, 602, 2222-2231.

53. Leftwich, T. R. and Teplyakov, A. V. Cycloaddition reactions of phenylazide and benzylazide on a Si(100)-2×1 surface. J. Phys. Chem. C2008, 112, 4297-4303.

52. Zhang, X. and Teplyakov, A. V. Adsorption of C60Buckminster fullerenes on an 11-amino-1-undecene covered Si(111) substrate. Langmuir, 2008, 24, 810-820. This work is featured on the cover of the issue.

51. Rodríguez-Reyes, J. C. F. and Teplyakov, A. V. Surface transamination reaction for tetrakis(dimethylamido)titanium with NHX-terminated Si(100) surfaces. J. Phys. Chem. C2007, 111(44), 16498-16505.

50. Rodríguez-Reyes, J. C. F. and Teplyakov, A. V. Cooperative nitrogen insertion processes: Thermal transformation of NH3on a Si(100) surface. Phys. Rev. B, 2007, 76, 075348-1-075348-16.

49. Rodríguez-Reyes, J. C. F. and Teplyakov, A. V. Chemistry of diffusion barrier film formation: Adsorption and dissociation of tetrakis-(dimethylamino)-titanium on Si(100)-2×1. J. Phys. Chem. C2007, 111, 4800-4808.

48. Ni, C.; Zhang, Z.; Wells, M.; Beebe, T. P., Jr.; Pirolli, L.; Méndez De Leo, L. P., and Teplyakov, A. V. Effect of film thickness and the presence of surface fluorine on the structure of a thin barrier film deposited from tetrakis-(dimethylamino)-titanium onto a Si(100)-2×1 substrate. Thin Solid Films2007, 515, 3030-3039.

47. Pirolli, L. and Teplyakov, A. V. Adsorption and thermal chemistry of 1,1,1,5,5,5,-hexafluoro-2,4-pentanedione (hfacH) and (hexafluoroacetylacetonate)Cu (vinyltrimethylsilane) ((hfac)Cu(VTMS)) on TiCN-covered Si(100) surface. Surf. Sci. 2006, 601,155-164.

46. Méndez De Leo, L. P.; Pirolli, L. and Teplyakov, A. V. Chemistry of 1,1,1,5,5,5-hexafluoro-2,4-pentanedione on Si(100)-2×1. J. Phys. Chem. B2006, 110, 14337-14344.

45. Pirolli, L. and Teplyakov, A. V. Molecular view of copper deposition chemistry: (hexafluoroacetylacetonate)Cu(vinyltrimethylsilane) on a Si(100)-2×1 Surface. Surf. Sci.2006, 600, 3313-3320.

44. Bocharov, S.; Dmytrenko, O.; Méndez De Leo, L. P. and Teplyakov, A. V. Azide reactions for controlling clean silicon surface chemistry: Benzylazide on Si(100)-2×1. J. Am. Chem. Soc.2006, 128, 9300-9301.

43. Méndez De Leo, L. P. and Teplyakov, A. V. Nitro group as a means of attaching organic molecules to silicon: Nitrobenzene on Si(100)-2×1. J. Phys. Chem. B2006, 110, 6899-6905.

42. Pirolli, L. and Teplyakov, A. V. Vinyltrimethylsilane (VTMS) as a probe of chemical reactivity of a TiCN diffusion barrier-covered silicon surface. J. Phys. Chem. B. 2006, 110, 4708-4716.

41. Pirolli, L. and Teplyakov, A. V. Complex thermal chemistry of vinyltrimethylsilane (VTMS) on Si(100)-2´1. J. Phys. Chem. B2005, 109(17), 8462-8468.

40. Watras, M. J. and Teplyakov, A. V. An infrared and computational investigation of vanadium-substituted Keggin [PVnW12-nO40](n+3)-polyoxometallic anions. J. Phys. Chem. B2005, 109(18), 8928-8934.

39. Bocharov, S.; Zhang, Z.; Beebe, T. P., Jr., and Teplyakov, A. V. Structure of a thin barrier film deposited from tetrakis-(dimethylamido)-titanium onto a Si(100) substrate. Thin Solid Films2005, 471, 159-165.

38. Bocharov, S. and Teplyakov, A. V. Adsorption, ordering, and chemistry of nitrobenzene on Si(100)-2×1. Surf. Sci. 2004, 573, 403-412.

37. Bulanin, K. M.; Kong, M. J.; Pirolli, L.; Mathauser, A. T. and Teplyakov, A. V. Adsorption and thermal decomposition of diethyaluminum hydride on Si(100)-2×1.  Surf. Sci. 2003, 542, 167-176.

36. Wingrave, J. and Teplyakov, A. V. Infrared spectrometer attachment assembly for use with vacuum and high-pressure cells. J. Vac. Sci. Technol. A2003, 21(5), 1800-1801.

35. Bocharov, S.; Mathauser, A. T. and Teplyakov, A. V. Adsorption and thermal chemistry of nitroethane on Si(100)-2×1. J. Phys. Chem. B.2003, 107, 7776-7782.

34. Dmytrenko, O.; Huang, W.; Polenova, T. E.; Francesconi, L. C.; Wingrave, J. A. and Teplyakov, A. V. Effect of cations in infrared and computational analysis of vanadium-containing six-coordinate oxotungstates.  J. Phys. Chem. B.2003, 107, 7747-7752.

33. Bocharov, S. and Teplyakov, A. V. Spectroscopic evidence for hydrogen diffusion through several-nanometers-thick titanium carbonitride layer on silicon. J. Am. Chem. Soc.2003, 125, 7196-7197.

32. Mathauser, A. T. and Teplyakov, A. V. The effects of surface poisoning by HCl on cyclization processes on a Cu3Pt(111) surface. Surf. Sci. 2003, 523, 37-47.

31. Müller, T.; Flynn, G. W.; Mathauser, A. T.; Teplyakov, A. V. Temperature-programmed desorption studies of n-alkane derivatives on graphite: Desorption energetics and the influence of functional groups on adsorbate self-assembly. Langmuir2003, 19, 2812-2821.

30. Bulanin, K. M.; Shah, A. G.; Fitzgerald, D. R.; Doren, D. J.; Teplyakov, A. V. Kinetically-favored adsorbate ordering: Hydrogen and iodine on the Si(100)-2×1 surface. J. Phys. Chem. B2002, 106, 7286-7289.

29. Bulanin, K.; Shah, A. and Teplyakov, A. V. Infrared spectroscopy studies of iodoethane on Si(100)-2×1: Adsorption and thermal decomposition leading to adsorbate ordering. J. Chem. Phys. 2001, 115(15),7187-7195.

28. Mathauser, A. T. and Teplyakov, A. V.  Naphthalene formation on Cu3Pt(111): dehydrocyclization of  4-phenyl-1-butene. Catal. Lett.2001, 73(2-4), 207-210.

27. Mathauser, A. T.; He, H.; and Teplyakov, A. V.  Adsorption and thermally induced reactions of halocyclohexanes on a Cu3Pt(111) surface. Surf. Sci. 2001, 479, 213-223.

26. He, H.; Mathauser, A. T.; and Teplyakov, A. V.  Self-Limiting heterogeneous reactions: Bifunctional hydrocarbon on a bimetallic alloy surface. J. Phys. Chem. 2000, 104 (51), 12306-12314.

25. Kong, M. J.; Teplyakov, A. V.; Jagmohan, J.; Lyubovitsky, J. G.; Mui, C.; and Bent, S. F. Interaction of C6cyclic hydrocarbons with a Si(100)-2×1 surface: adsorption and hydrogenation reactions. J. Phys. Chem. B2000, 104, 3000-3007.

24. Gurevich, A. B.; Bent, B. E.; Teplyakov, A. V. and Chen, J. G. A NEXAFS investigation of the formation and decomposition of CuO and Cu2O thin films on Cu(100). Surf. Sci.1999, 442, L971-L976.

23. Lal, P.; Noah, Y.; Kong, M. J.; Teplyakov, A. V. and Bent, S. F. Adsorption of ethylene on the Ge(100)-2 x 1 surface: Coverage and time-dependent behavior. J. Chem. Phys.1999, 110 (21),10545-10553.

22. Teplyakov, A. V.; Lal, P.; Noah, Y. A.; Bent, S. F.  Evidence for a Retro-Diels-Alder Reaction on a Single Crystal Surface: Butadienes on Ge(100). J. Am. Chem. Soc.1998, 120 (29), 7377-7378.

21. Kong, M. J.; Teplyakov, A. V. and Bent, S. F. NEXAFS studies of adsorption and reaction of benzene on Si(100)-(2×1). Surf. Sci.1998, 411, 286-293.

20. Teplyakov, A. V.; Kong, M. J. and Bent, S. F. Diels-Alder reactions of butadienes with the Si(100)-2×1 surface as a dienophile: vibrational spectroscopy, thermal desorption and near edge X-ray absorption fine structure studies. J. Chem. Phys.1998, 108 (11),4599-4606.

19. Teplyakov, A. V.; Bent, B. E.; Eng, J., Jr. and Chen, J. G. Vibrational mode-softening of alkanes on clean and modified Cu and Mo surfaces: absence of a simple correlation with thermal desorption temperatures. Surf. Sci.1998, 399, L342-L350.

18. Gurevich, A. B.; Teplyakov, A. V.; Yang, M. X. and Bent, B. E. Synthesis, bonding and reactions of p-bonded allyl groups on Cu(100): allyl radical ejection. Langmuir 1998, 14 (6),1419-1427.

17. Teplyakov, A. V.; Gurevich, A. B.; Garland, E. R. and Bent, B. E. Mechanism of dehydrocyclization of 1-hexene to benzene on Cu3Pt(111): identification of 1,3,5-hexatriene as a reaction intermediate. Langmuir1998, 14 (6),1337-1344.

16. Lusvardi, V. S.; Barteau, M. A.; Chen, J. G; Eng, J., Jr.; Frühberger, B. and Teplyakov, A. V. A NEXAFS investigation of the reduction and reoxidation of TiO2(001). Surf. Sci.1998, 397, 237-250.

15. Yang, M. X.; Teplyakov, A. V. and Bent, B. E. Regioselectivity of deuterium atom addition to olefin monolayers on Cu(100).J. Phys. Chem. B1998, 102 (16), 2985-2990.

14. Teplyakov, A. V.; Gurevich, A. B.; Yang, M. X.; Chen, J. G. and Bent, B. E. NEXAFS and TPD studies of molecular adsorption of hydrocarbons on Cu(100): segmental correlations with the heats of adsorption. Surf. Sci.1998, 396, 340-348.

13. Teplyakov, A. V.; Kong, M. J. and Bent, S. F. Vibrational spectroscopic studies of Diels-Alder reactions with the Si(100)-2×1 surface as a dienophile. J. Am. Chem. Soc.1997, 119, 11100-11101.

12. Teplyakov, A. V. Bonding and reactions of hydrocarbons and their fragments on single crystal surfaces of copper and copper-platinum alloy: identification of surface intermediates and reaction mechanisms. (1997), 274 pp. Ph. D. Thesis.

11. Teplyakov, A. V. and Bent, B. E. Mechanism of dehydrocyclization of 1-hexene to benzene on Cu3Pt(111). J. Phys. Chem. B1997, 101, 9052-9059.

10. Kash, P. W.; Yang, M. X.; Teplyakov, A. V.; Flynn, G. W. and Bent, B. E. Chemical displacement of molecules adsorbed on surfaces: low temperature studies with application to surface reactions. J. Phys. Chem. B1997, 101, 7908-7918.

9. Teplyakov, A. V. and Bent, B. E. Dehydrocyclization of 1-hexene to benzene on Cu3Pt(111).  Catal. Lett.1996, 42 (1,2), 1-4.

8. Teplyakov, A. V. and Bent, B. E. Infrared spectroscopic study of the chemical displacement of hydrocarbon monolayers from a Cu(100) surface. Chem. Phys. Lett. 1996, 260, 65-70.

7. Lin, J.-L.; Teplyakov, A. V. and Bent, B. E. The effects of alkyl chain structure on carbon-halogen bond dissociation and b-hydride elimination by alkyl halides on a Cu(100) surface.  J. Phys. Chem.1996, 100, 10721-10731.

6. Teplyakov, A. V. and Bent, B. E. Distinguishing direct and quasi-direct mechanisms for an Eley-Rideal gas-surface reaction: stereochemistry of H addition to cyclohexene on Cu(100). J. Chem. Soc. Faraday Trans.1995, 91 (20),3645-3654.

5. Teplyakov, A. V. and Bent, B. E. b-Hydride elimination from alkyl and cycloalkyl groups on Cu(100) surface: ring strain and planarity of the transition state. J. Am. Chem. Soc.1995, 117, 10076-10087.

4. Netrusov, A.; Teplyakov, A.; Bessarabov, D. and Teplyakov V. Gas separation systems for biotechnology by integrated membranes with moving liquid carriers.  Conf. Adv. Biochem. Eng., Three-Day Symp., 2nd, 1994, 106-8.

3. Teplyakov, V.; Beckman, I.; Teplyakov, A. and Netrusov, A. Integrated membrane systems with moving liquid carriers for biogas separation in biotechnology. BHR Group Conf. Ser. Publ. 1993, 5(3rd International Conference on Bioreactor and Bioprocess Fluid Dynamics, 1993), 315-322.

2. Beckman, I. N.; Bessarabov, D. G., Teplyakov, V. V. and Teplyakov, A. V. Integrated membrane systems with moving liquid carriers for multicomponent gas separation. BHR Group Conf. Ser. Publ.1993, 3(Effective Membrane Processes-New Perspectives), 297-306.

1. Beckman, I. N.; Gladkov, V. S.; Teplyakov, V. V.; Teplyakov, A. V. and Kuznetsov, L. P. Method of membrane-absorption separation of gas mixtures and the set up for.  Application for patent of the USSR, approval #1637850, BOID 53/22, 1991.