Open access links are provided for many of the papers listed below. If no link is provided, either the paper is already freely available from the publisher, or no open access version exists. If you cannot access a paper listed here that you would like to read, please contact Dr. Law at

Y. Wang, S. V. Mambakkam, Y.-X. Huang, Y. Wang, Y. Ji, C. Xiao, S. A. Yang, S. A. Law, and J. Q. Xiao. Observation of nonlinear planar Hall effect in magnetic-insulator–topological-insulator heterostructures Phys. Rev. B 106, 155408 (2022). Open Access Link

Y. Liu, W. Acuna, H. Zhang, Q. D. Ho, R. Hu, A. Wang, A. Janotti, G. W. Bryant, A. Davydov, J. M. O. Zide,  and S. Law. Bi2Se3 Growth on (001) GaAs Substrates for Terahertz Integrated Systems ACS Applied Materials & Interfaces 14, 42683–42691 (2022). Open Access Link

R. A. Kowalski, J. R. Nolen, G. Varnavides, S. Mika Silva, J. E. Allen, C. J. Ciccarino, D. M. Juraschek, S. Law, P. Narang, and J. D. Caldwell. Mid- to far-infrared anisotropic dielectric function of HfS2 and HfSe2 Advanced Optical Materials 2200933 (2022).

D. Q. To, Z. Wang, Y. Liu, W. Wu, M. B. Jungfleisch, J. Q., Xiao, J. M. O. Zide, S. Law, and M. F. Doty. Surface plasmon-phonon-magnon polariton in a topological insulator-antiferromagnetic bilayer structure Physical Review Materials 6, 085201 (2022). Open Access Link

T. Li, Y. Wang, W. Li, D. Mao, C. J. Benmore, I. Evangelista, H. Xing, Q. Li, F. Wang, G. Sivaraman, A. Janotti, S. Law, and T. Gu. Structural Phase Transitions between Layered Indium Selenide for Integrated Photonic Memory. Advanced Materials, 34, 2108261 (2022). Open Access Link

D. Q. To, Z. Wang, Q. D. Ho, R. Hu, W. Acuna, Y. Liu, G. W. Bryant, A. Janotti, J. M. O. Zide, S. Law and M. Doty. Strong coupling between a topological insulator and a III-V heterostructure at terahertz frequency Physical Review Materials, 6, 035201 (2022). Open Access Link

S. Chen, A. Bylinkin, Z. Wang, M. Schnell, G. Chandan, P. Li, A. Y. Nikitin, S. Law and R. Hillenbrand. Real-space nanoimaging of THz polaritons in the topological insulator Bi2Se3 Nature Communications, 13, 1347 (2022).

P. Sohr, D. Wei, Z. Wang, and S. Law. Strong coupling in semiconductor hyperbolic metamaterials Nano Letters, 21, 9951-9957 (2021). Open Access Link

M. N. Alam, J. R. Matson, P. Sohr, J. D. Caldwell, and S. Law Interface quality in GaSb/AlSb short period superlattices. Journal of Vacuum Science and Technology A, 39, 063406 (2021). Open Access Link

S. Nasir, Z. Wang, S. V. Mambakkam, and S. Law. In-Plane Plasmon Coupling in Topological Insulator Bi2Se3 Thin Films. Applied Physics Letters, 119, 201103 (2021). Open Access Link

Z. Wang and S. Law. Optimization of the Growth of the Van der Waals Materials Bi2Se3 and (Bi0.5In0.5)2Se3 by Molecular Beam Epitaxy. Crystal Growth & Design. Open Access Link

S. V. Mambakkam, S. Nasir, W. Acuna, J. M. O. Zide, and S. Law. Growth of topological insulator Bi2Se3 particles on GaAs via droplet epitaxy. Journal of Vacuum Science and Technology A, 39, 053407 (2021). Open Access Link

G. Scappucci, P. J. Taylor, J. R. Williams, T. Ginley, and S. Law. Crystalline materials for quantum computing: semiconductor heterostructures and topological insulators exemplars. MRS Bulletin, 46, 1-11 (2021).

S. Law and S. Kokkelmans. Materials for quantum technologies: Computing, information, and sensing. Journal of Applied Physics, 129, 140401 (2021).

T. Ginley and S. Law. Self-assembled nano-columns in Bi2Se3 grown by molecular beam epitaxy. Journal of Vacuum Science and Technology A, 39, 033401 (2021). Open Access Link

P. Sohr and S. Law. Structural parameters of hyperbolic metamaterials controlling high-k mode resonant wavelengths. Journal of the Optical Society of America B, 37, 3784-3791 (2020). Open Access Link

Z. Wang, T. P. Ginley, S. V. Mambakkam, G. Chandan, Y. Zhang, C. Ni, and S. Law. Plasmon coupling in topological insulator multilayers. Physical Review Materials, 4, 115202 (2020).

Y. Wang and S. Law. Propagating Dirac plasmon polaritons in topological insulators. Journal of Optics, 22, 125001 (2020). Open Access Link

T. Shi, K. Kushnir, Z. Wang, S. Law, and L. Titova. Non-equilibrium free carrier dynamics in Bi2Se3, (Bi75In0.25)2Se3, and (Bi0.50In0.50)2Se3: from topological to band insulator. ACS Photonics, 7, 2778-2786 (2020).

Y. Wang, Y. Wang, T. Wang, X. Wang, Y.-S. Ou, Y. Ji, M. F. Doty, S. Law, and J. Q. Xiao. One-dimensional antilocalization of electrons from spin disorder probed by nonlinear Hall effect. Physical Review B, 102, 125430 (2020).

S. V. Mambakkam and S. Law. Fabrication of topological insulator nanostructures. Journal of Vacuum Science and Technology B, 38, 055001 (2020). Open Access Link Selected for the 2020 AVS Shop Notes Award!

Y. Wang, J. Bork, S. Law, and J. Zide. Improved epitaxial growth of TbAs film on III–V semiconductors. Journal of Vacuum Science and Technology A, 38, 033405 (2020). Open Access Link

Q. Li, Y. Wang, T. Li, W. Li, F. Wang, A. Janotti, S. Law, and T. Gu. Localized Strain Measurement in Molecular Beam Epitaxially Grown Chalcogenide Thin Films by Micro-Raman Spectroscopy. ACS Omega, 5, 8090-8096 (2020).

Y.-S. Ou, X. Zhou, R. Barri, Y. Wang, S. Law, J. Q. Xiao, and M. Doty. Development of a System for Low-Temperature Ultrafast Optical Study of Three-Dimensional Magnon and Spin Orbital Torque Dynamics. Review of Scientific Instruments, 91, 033701 (2020). Open Access Link

T. Ginley, Y. Zhang, C. Ni, and S. Law. Epitaxial growth of Bi2Se3 in the (0015) orientation on GaAs (001). Journal of Vacuum Science and Technology A, 38, 023404 (2020). Open Access Link

Y. Wang, D. Wei, P. Sohr, J. Zide, and S. Law. Extending the Tunable Plasma Wavelength in III–V Semiconductors from the Mid‐Infrared to the Short‐Wave Infrared by Embedding Self‐Assembled ErAs Nanostructures in GaAs. Advanced Optical Materials, 1900937 (2020). Open Access Link

D. Wei, S. Maddox, P. Sohr, S. Bank, and S. Law. Enlarged growth window for plasmonic silicon-doped InAs using a bismuth surfactant. Optical Materials Express, 10, 302-311 (2020). Open Access Link

P. Sohr, C. I. Ip, and S. Law. Far-field thermal emission from a semiconductor hyperbolic metamaterial. Optics Letters, 44, 1138-1141 (2019). Open Access Link

P. Sohr, D. Wei, S. Tomasulo, M. Yakes, and S. Law. Simultaneous Large Mode Index and High Quality Factor in Infrared Hyperbolic Metamaterials. ACS Photonics, 5, 4003–4008 (2018). Open Access Link

T. Ginley, Y. Wang, Z Wang, and S. Law. Dirac plasmons and beyond: the past, present, and future of plasmonics in 3D topological insulators. MRS Communications 8782-794 (2018). Open Access Link

Y. Wang and S. Law. Optical properties of (Bi1-xInx)2Se3 thin films. Opt. Mat. Exp. 8, 2570-2578 (2018). Selected as an Editor’s Pick Article!

T. Ginley and S. Law. Coupled Dirac plasmons in topological insulators. Adv. Opt. Mat. 6, 1800113  (2018). Open Access Link

Y. Wang, T. Ginley, and S. Law. Growth of high-quality Bi2Se3 topological insulators using (Bi1-xInx)2Se3 buffer layers. J. of Vac. Sci. Technol. B 36, 02D101 (2018);  Open Access Link Selected as an Editor’s Pick Article!

D. Wei, C. Harris, and S. Law. Volume plasmon polaritons in semiconductor hyperbolic metamaterials. Opt. Mat. Exp. 7, 2672-2681 (2017);

Y. Wang, T. Ginley, C. Zhang, and S. Law. Transport properties of Bi2(Se1-xTex)3 thin films grown by molecular beam epitaxy. J. of Vac. Sci. Technol. B 35, 02B106 (2017); Open Access Link

T. Ginley, Y. Wang, and S. Law. Topological insulator film growth by molecular beam epitaxy: a review. Crystals 6, 154 (2016); Open Access Link

D. Wei, C. Harris, C. C. Bomberger, J. Zhang, J. Zide, and S. Law. Single-material semiconductor hyperbolic metamaterials. Opt. Exp. 24, 8735-8745 (2016);

T. Ginley and S. Law. Growth of Bi2Se3 topological insulator films using a selenium cracker source.  J. of Vac. Sci. Technol. B 34, 02L105 (2016);

R. Liu, Y. Zhong, L. Yu, H. Kim, S. Law, J.-M. Zuo, and D. Wasserman. Mid-infrared emission from In(Ga)Sb layers on InAs(Sb).  Optics Express 22, 24466 (2014);

A. Rosenberg, J. Surya, R. Liu, W. Streyer, S. Law, S. Leslie, R. Bhargava, and D. Wasserman. Flat mid-infrared composite plasmonic materials using lateral doping-patterned semiconductors. Journal of Optics 16, 094012 (2014);

L. Yu, D. Jung, S. Law, J. Shen, J. J. Cha, M. L. Lee and D. Wasserman. Controlling quantum dot energies using submonolayer bandstructure engineering. Appl. Phys. Lett. 105, 081103 (2014);

S. Law, R. Liu, D. Wasserman. Doped semiconductors with band-edge plasma frequencies. J. Vac. Sci. Technol. B 32, 052601 (2014);  Selected as an Editor’s Pick Article!

W. Streyer, S. Law, A. Rosenberg, C. Roberts, V. A. Podolskiy, A. J. Hoffman, D. Wasserman. Engineering absorption and blackbody radiation in the far-infrared with surface phonon polaritons on gallium phosphide. Appl. Phys. Lett. 104, 131105 (2014);

S. Law, C. Roberts, T. Kilpatrick, L. Yu, T. Ribaudo, E. A. Shaner, V. Podolskiy, D. Wasserman. All-Semiconductor Negative-Index Plasmonic Absorbers. Phys. Rev. Lett. 112, 017401 (2014);

S. Law, L. Yu, A. Rosenberg, D. Wasserman. All-Semiconductor Plasmonic Nanoantennas for Infrared Sensing. Nano. Lett. 13, 4569 (2013);  Press: PhysOrg, Nanowerk,,

Y. Zhong, P. B. Dongmo, L. Gong, S. Law, B. Chase, D. Wasserman, J. M. O. Zide. Degenerately doped InGaBiAs:Si as a highly conductive and transparent contact material in the infrared range. Opt. Mat. Exp. 3, 1197 (2013);

J. R. Felts, S. Law, C. M. Roberts, V. Podolskiy, D. M. Wasserman, W. P. King. Near-field infrared absorption of plasmonic semiconductor microparticles studied using atomic force microscope infrared spectroscopy. Appl. Phys. Lett. 102, 152110 (2013);  Press:

W. Streyer, S. Law, G. Rooney, T. Jacobs, D. Wasserman. Strong absorption and selective emission from engineered metals with dielectric coatings. Opt. Exp. 21, 9113 (2013);

S. Law, V. Podolskiy, D. Wasserman. Towards nano-scale photonics with micro-scale photons: the opportunities and challenges of mid-infrared plasmonics. Nanophotonics. 2, 103 (2013);

S. Law, L. Yu, D. Wasserman. Epitaxial growth of engineered metals for mid-infrared plasmonics.
J. Vac. Sci. Technol. B 31, 03C121 (2013);

L. Yu, S. Law, D. Wasserman. Electroluminescence from quantum dots fabricated with nanosphere lithography. Appl. Phys. Lett. 101, 103105 (2012);

S. Law, D. C. Adams, A. M. Taylor, D. Wasserman. Mid-infrared designer metals. Opt. Exp. 20, 12155 (2012);

R. Prozorov, M. D. Vannette, S. A. Law, S. L. Bud’ko and P. C. Canfield. Interplay of local-moment ferromagnetism and superconductivity in ErRh4B4 single crystals. J. Phys.: Conf. Ser. 150 052218 (2009); http://doi:10.1088/1742-6596/150/5/052218

R. Prozorov, M. D. Vannette, S. A. Law, S. L. Bud’ko, P. C. Canfield. Coexistence of ferromagnetism and superconductivity in ErRh 4 B 4 single crystals probed by dynamic magnetic susceptibility. Phys. Rev. B 77, 100503(R) (2008);

M. D. Vannette, A. S. Sefat, S. Jia, S. A. Law, G. Lapertot, S. L. Bud’ko, P. C. Canfield, J. Schmalian, R. Prozorov. Precise measurements of radio-frequency magnetic susceptibility in ferromagnetic and antiferromagnetic materials. J. Magn. Magn. Mat. 320, 354 (2008);

S. L. Bud’ko, S. A. Law, P. C. Canfield, G. D. Samolyuk, M. S. Torikachvili, G. M. Schmiedeshoff. Thermal expansion and magnetostriction of pure and doped RAgSb2 (R= Y, Sm, La) single crystals. J. Phys.: Condens. Matter 20, 115210 (2008);

M. S. Torikachvili, S. L. Bud’ko, S. A. Law, M. E. Tillman, E. D. Mun, P. C. Canfield. Hydrostatic pressure study of pure and doped La 1− x R x Ag Sb 2 (R= Ce, Nd) charge-density-wave compounds. Phys. Rev. B 76, 235110 (2007);

S. A. Law, S. L. Bud’ko, P. C. Canfield. Effects of mixed rare earth occupancy on the low temperature properties of (R, R′, R ″…) Ni2Ge2 single crystals. J. Magn. Magn. Mat. 312, 140 (2007).

R. Prozorov, M. D. Vannette, G. D. Samolyuk, S. A. Law, S. L. Bud’ko, P. C. Canfield. Contactless measurements of Shubnikov-de Haas oscillations in the magnetically ordered state of CeAgSb2 and SmAgSb2 single crystals. Phys. Rev. B 75, 014413 (2007);

J. W. Kim, Y. Lee, D. Wermeille, B. Sieve, L. Tan, S. Law, P. C. Canfield, B. N. Harmon, A. I. Goldman. Systematics of x-ray resonant scattering amplitudes in RNi2Ge2 (R= Gd, Tb, Dy, Ho, Er, Tm): The origin of the branching ratio at the L edges of the heavy rare earths. Phys. Rev. B 72, 064403 (2005);