1. “The cause of extremely long-lasting room-temperature persistent photoconductivity in complex oxides” Z. Zhang, A., Janotti arXiv preprint, (2019) [doi]
  2. “Hybrid functional calculations of electronic structure and carrier densities in rare-earth monopnictides” S. Khalid, A. Sharan, A. Janotti, arXiv preprint (2019) [doi]
  3. “Band gap evolution in Ruddlesden-Popper phases”, W. Li, S. Niu, B. Zhao, R.Haiges, Z. Zhang, J. Ravichandran, A. Janotti, Phys. Rev. Mater. 3, 101601 (2019) [doi]
  4. “Effects of Doping on the Crystal Structure of BiVO4” I. Laraib, M. A. Carneiro, A. Janotti, J. Phys. Chem. C 123, 26752 (2019) [doi]
  5. “Impact of phonons and spin-orbit coupling on Auger recombination in InAs” J.X. Shen, D. Steiauf, A. McAllister, G. Shi, E. Kioupakis, A. Janotti, C. G. Van de Walle, Phys. Rev B 100, 155202 (2019) [doi]
  6. “Surface Reconstructions of Heusler Compounds in the Ni-Ti-Sn (001) System” A.D. Rice, A. Sharan, N.S. Wilson, S.D. Harrington, M. Pendharkar, A. Janotti, C.J. Palmstrom, arXiv preprint (2019) [doi]
  7. “Carrier-Density-Induced Ferromagnetism in EuTiO3 Bulk and Heterostructures” Z. Gui, A. Janotti, Phys. Rev. Lett. 123, 127201 (2019) [doi]
  8. “Strong band gap reduction in highly mismatched alloy InAlBiAs grown by molecular beam epitaxy” J. Zhang, Y. Wang, S. Khalid, A. Janotti, G. Haugstad, J. Zide, J. Appl. Phys. 126 095704, (2019) [doi]
  9. “Velocity saturation in La-doped BaSnO3 thin films” H. Chandrasekar, J. Cheng, T. Wang, Z. Xia, N.G. Combs, C. R. Freeze, P. B. Marshall, J. McGlone, A. Arehart, S. Ringel, A. Janotti, S. Stemmer, W. Lu, S. Rajan, Appl. Phys. Lett. 115, 092102 (2019) [doi]
  10. “Role of point defects in the electrical and optical properties of In2O3” I. Chatratin, F. Sabino, P. Reunchan, S. Limpijumnong, J. B. Varley, C. G. Van de Walle, A. Janotti, Phys. Rev. Mater., 3, 074604 (2019) [doi]
  11. “Formation of two-dimensional electron and hole gases at the interface of half-Heusler semiconductors” A. Sharan, Z. Gui, A. Janotti, Phys. Rev. Mater. 3, 061602 (2019) [doi]
  12. “Bismuth-doped Ga2O3 as candidate for p-type transparent conducting material” F. Sabino, X. Cai, S.H. Wei, A. Janotti, arXiv preprint, (2019) [doi]


  1. “Topological phase transition in LaAs under pressure”, S. Khalid, F. Sabino, A. Janotti, Phys. Rev. B, 98 220102 (2018) [doi]
  2. “Unique Surface Enhanced Raman Scattering Substrate for the Study of Arsenic Speciation and Detection”, S. Xu, F. Sabino, A. Janotti, D.B. Chase, D.L. Sparks, J.F. Rabolt, J. Phys. Chem. A 122 9474 (2018) [doi]
  3. “Large Disparity Between Optical and Fundamental Band Gaps in Layered In2Se3”, W. Li, F. Sabino, F. Crasto de Lima, T. Wang, R.H. Miwa, A. Janotti, Phys. Rev. B 98 165134, (2018) [doi]
  4. “In situ XPS study on atomic layer etching of Fe thin film using Cl2 and acetylacetone”, X. Lin, M. Chen, A. Janotti, R. Opila, J. Vac. Sci. Technol. A 36, 051401 (2018) [doi]
  5. “Band Gap and Band Offset of Ga2O3 and (AlxGa1-x)2O3 Alloys”, T. Wang, W. Li, C. Ni, A. Janotti, Phys. Rev. Appl. 10, 011003 (2018) [doi]
  6. “First-principles calculations of point defects for quantum technologies”, C.E. Dreyer, A. Alkauskas, J.L. Lyons, A. Janotti, C.G. Van de Walle, Annu. Rev. Mater. Res., 48, 1 (2018) [doi]
  7. “A simple electron counting model for half-Heusler surfaces” J. K. Kawasaki, A. Sharan, L. I. M. Johansson M. HjortR. TimmB. ThiagarajanB. D. SchultzA. MikkelsenA. Janotti, and C. J. Palmstrøm, Sci. Adv. 4 (2018) [doi]
  8. “Carrier density control of magnetism and Berry phases in doped EuTiO3,” Kaveh Ahadi, Zhigang Gui, Zach Porter, Jeffrey W. Lynn, Zhijun Xu, Stephen D. Wilson, Anderson Janotti, and Susanne Stemmer, APL Materials 6, 056105 (2018), [doi]
  9. “Electronic Structure Characterization of Hydrogen Terminated n-type Silicon Passivated by Benzoquinone-Methanol Solutions” M. Chen, J. Hack, X. Lin, A. Janotti, R. Opila, Coatings 8, 108 (2018) [doi]
  10. “Impact of point defects electrochromism in WO3,” Wennie Wang; Hartwin Peelaers; Jimmy-Xuan Shen; Anderson Janotti; Chris G. Van de Walle, Oxide-based Materials and Devices IX; 105332C (2018), [doi]
  11. Disentangling the role of small polarons and oxygen vacancies in CeO2 (vol 95, 2017)” L. Sun, X. Huang, L. Wang, A. Janotti, Phys. Rev. B 97, 079906 (2018) [doi]
  12. “First-principles calculations of optical transitions at native defects and impurities in ZnO” John L Lyons, Joel B Varley, Anderson Janotti, Chris G Van de Walle, Oxide-based Materials and Devices IX; 105331O(2018), [doi]
  13. “Interfacial Cation-Defect Charge Dipoles in Stacked TiO2/Al2O3 Gate Dielectrics” L. Zhang, A. Janotti, A.C. Meng, K. Tang, C.G. Van de Walle, P.C. McIntyre, ACS Appl. Mater. Interfaces 10 5140 (2018) [doi]
  14. “Defects in AlN as candidates for solid-state qubits” J.B. Varley, A. Janotti, C.G. Van de Walle, Phys. Rev. B 97, 161201 (2018) [doi]
  15. “Growth, electrical, structural, and magnetic properties of half-Heusler CoTi1xFexSb,” S. D. Harrington, A. D. Rice, T. L. Brown-Heft, B. Bonef, A. Sharan, A. P. McFadden, J. A. Logan, M. Pendharkar, M. M. Feldman, O. Mercan, A. G. Petukhov, A. Janotti, L. C. Arslan, and C. J. Palmstrøm, Phys. Rev. Materials 2, 014406 (2018),[doi]


  1. “Thermal transport across metal silicide-silicon interfaces: An experimental comparison between epitaxial and nonepitaxial interfaces,” N. Ye, J.P. Feser, S. Sadasivam, T.S. Fisher, T. Wang, C. Ni, and A. Janotti, Phys. Rev. B 95, 085430 (2017).[doi]
  2. “Band alignment and p-type doping of ZnSnN2,” T. Wang, C. Ni, and A. Janotti, Phys. Rev. B 95, 205205 (2017).[doi]
  3. “Disentangling the role of small polarons and oxygen vacancies in CeO2,” L. Sun, X. Huang, L. Wang and A. Janotti, Phys. Rev. B 95, 245101 (2017). [doi]
  4. “Strong effect of electron-phonon interaction on the lattice thermal conductivity in 3C-SiC,” T. Wang, Z. Gui, A. Janotti, C. Ni, and P. Karandikar, Phys. Rev. Materials 01, 034601 (2017). [doi]
  5. “Valence-band offsets of CoTiSb/In0.53Ga0.47As and CoTiSb/In0.52Al0.48As heterojunctions,” S. Harrington, A. Sharan, et al., Appl. Phys. Lett. 111, 061605 (2017). [doi]
  6. “Hybrid-Functional Calculations of the Copper Impurity in Silicon,” A. Sharan, Z. Gui and A. Janotti, Phys. Rev. Applied 8, 024023 (2017). [doi]
  7. Selected publications:

  1. “Determination of the Mott-Hubbard gap in GdTiO3”, L. Bjaalie, A. Verma, B. Himmetoglu, A. Janotti, S. Raghava, V. Protasenko, E. H. Steenbergen, D. Jena, S. Stemmer, and C. G. Van de Walle, Phys. Rev. B 92, 085111 (2015). [doi]
  2. “Small hole polarons in rare-earth titanates”, L. Bjaalie, D. G. Ouellette, P. Moetakef, T. A. Cain, A. Janotti, B. Himmetoglu, S. J. Allen, S. Stemmer, and C. G. Van de Walle, Appl. Phys. Lett. 106, 212103 (2015) [doi]
  3. “First-principles calculations for point defects in solids”, C. Fryesoldt, B. Grabowski, T. Hikel, J. Neugebauer, G. Kresse, A. Janotti, and C. G. Van de Walle, Rev. Mod. Phys. 86, 253 (2014). [doi]
  4. “Turning SrTiO3 into a Mott insulator”, L. Bjaalie, B. Himmetoglu, A. Janotti, and C. G. Van de Walle, Phys. Rev. B 90, 195117 (2014). [doi]
  5. “Interband and polaronic excitations in YTiO3 from first principles”, B. Himmetoglu, A. Janotti, L. Bjaalie, and C. G. Van de Walle, Phys. Rev. B 90, 161102(R) (2014). [doi]
  6. “Vacancies and small polarons in SrTiO3”, A. Janotti, J. B. Varley, M. Choi, and C. G. Van de Walle. Phys. Rev. B 90, 085202 (2014). [doi]
  7. “Hybrid functional studies of the oxygen vacancy in TiO2”, A. Janotti, J. B. Varley, P. Rinke, N. Umezawa, G. Kresse, and C. G. Van de Walle, Phys. Rev. B 81, 085212 (2010). [doi]
  8. “Band alignment at band-insulator/Mott-insulator interfaces,” A. Janotti, L. Bjaalie, B. Himmetoglu, and C. G. Van de Walle, Phys. Status Solidi RRL 8, 577 (2014). [doi]
  9. “Controlling the density of the two-dimensional electron gas at the SrTiO3/LaAlO3 interface”, A. Janotti, L. Bjaalie, L. Gordon, and C. G. Van de Walle. Phys. Rev. B Rapid Commun. 86, 241108 (2012). [doi]
  10. “Hydrogen multicenter bonds”, A. Janotti and C. G. Van de Walle, Nature Mater. 6, 44 (2007). [doi]


Earlier publications