Dissertation Defense Schedule

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PROGRAM | Materials Science & Engineering

Limiting Behaviors in Molecular Beam Epitaxy: From Source Cell Non-Idealities to Growth Condition Sensitivity of Dilute Bismuthides

By: James Bork Chair: Joshua Zide

ABSTRACT

Growth of modern materials by molecular beam epitaxy (MBE) often involves narrow growth windows and high sensitivity to growth conditions, placing stringent requirements on flux control and stability. This dissertation investigates fundamental limitations in MBE source behavior and develops strategies to optimize growth control. Through systematic study of liquid sources, valved sources, and filament sources, several key effects are identified and characterized. A novel continuous valve rotation calibration method is developed for valved sources, enabling more precise flux control and revealing non-monotonic valve behavior. Temperature instabilities in filament sources are shown to cause significant variations in doping concentrations. These findings are applied to the growth of InAlBiAs, demonstrating the successful synthesis of high-quality films with up to 5.1% Bi content and controlled strain states. The work establishes critical guidelines for MBE operation, such as directional flux calibration and repeated cell temperature oscillation, and highlights the importance of source-specific considerations in achieving reproducible growth of sensitive materials. These insights advance our fundamental understanding of MBE growth limitations and provide practical strategies for improving the synthesis of next-generation semiconductor materials.

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The Process

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Dissertation Manual

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Defense Submission Form

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